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Purely antiferromagnetic magnetoelectric random access memory

Author

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  • Tobias Kosub

    (Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.)
    Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research)

  • Martin Kopte

    (Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.)
    Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research)

  • Ruben Hühne

    (Institute for Metallic Materials, Institute for Solid State and Materials Research (IFW Dresden e.V.))

  • Patrick Appel

    (University of Basel)

  • Brendan Shields

    (University of Basel)

  • Patrick Maletinsky

    (University of Basel)

  • René Hübner

    (Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research)

  • Maciej Oskar Liedke

    (Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics)

  • Jürgen Fassbender

    (Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research)

  • Oliver G. Schmidt

    (Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.))

  • Denys Makarov

    (Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.)
    Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research)

Abstract

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics.

Suggested Citation

  • Tobias Kosub & Martin Kopte & Ruben Hühne & Patrick Appel & Brendan Shields & Patrick Maletinsky & René Hübner & Maciej Oskar Liedke & Jürgen Fassbender & Oliver G. Schmidt & Denys Makarov, 2017. "Purely antiferromagnetic magnetoelectric random access memory," Nature Communications, Nature, vol. 8(1), pages 1-7, April.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms13985
    DOI: 10.1038/ncomms13985
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    Cited by:

    1. Pavlo Makushko & Tobias Kosub & Oleksandr V. Pylypovskyi & Natascha Hedrich & Jiang Li & Alexej Pashkin & Stanislav Avdoshenko & René Hübner & Fabian Ganss & Daniel Wolf & Axel Lubk & Maciej Oskar Lie, 2022. "Flexomagnetism and vertically graded Néel temperature of antiferromagnetic Cr2O3 thin films," Nature Communications, Nature, vol. 13(1), pages 1-13, December.
    2. Fabio Orlandi & Davide Delmonte & Gianluca Calestani & Enrico Cavalli & Edmondo Gilioli & Vladimir V. Shvartsman & Patrizio Graziosi & Stefano Rampino & Giulia Spaggiari & Chao Liu & Wei Ren & Silvia , 2022. "γ-BaFe2O4: a fresh playground for room temperature multiferroicity," Nature Communications, Nature, vol. 13(1), pages 1-10, December.

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