Author
Listed:
- Lei Wang
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
National University of Singapore)
- Zhuo Wang
(National University of Singapore
National University of Singapore
The Blackett Laboratory, Imperial College London)
- Hai-Yu Wang
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University)
- Gustavo Grinblat
(The Blackett Laboratory, Imperial College London)
- Yu-Li Huang
(National University of Singapore
Institute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology and Research))
- Dan Wang
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University)
- Xiao-Hui Ye
(Laser Materials Processing Research Center, School of Materials Science and Engineering, Tsinghua University)
- Xian-Bin Li
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University)
- Qiaoliang Bao
(Monash University)
- AndrewThye-Shen Wee
(National University of Singapore)
- Stefan A Maier
(The Blackett Laboratory, Imperial College London)
- Qi-Dai Chen
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University)
- Min-Lin Zhong
(Laser Materials Processing Research Center, School of Materials Science and Engineering, Tsinghua University)
- Cheng-Wei Qiu
(National University of Singapore)
- Hong-Bo Sun
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
College of Physics, Jilin University)
Abstract
In emerging optoelectronic applications, such as water photolysis, exciton fission and novel photovoltaics involving low-dimensional nanomaterials, hot-carrier relaxation and extraction mechanisms play an indispensable and intriguing role in their photo-electron conversion processes. Two-dimensional transition metal dichalcogenides have attracted much attention in above fields recently; however, insight into the relaxation mechanism of hot electron-hole pairs in the band nesting region denoted as C-excitons, remains elusive. Using MoS2 monolayers as a model two-dimensional transition metal dichalcogenide system, here we report a slower hot-carrier cooling for C-excitons, in comparison with band-edge excitons. We deduce that this effect arises from the favourable band alignment and transient excited-state Coulomb environment, rather than solely on quantum confinement in two-dimension systems. We identify the screening-sensitive bandgap renormalization for MoS2 monolayer/graphene heterostructures, and confirm the initial hot-carrier extraction for the C-exciton state with an unprecedented efficiency of 80%, accompanied by a twofold reduction in the exciton binding energy.
Suggested Citation
Lei Wang & Zhuo Wang & Hai-Yu Wang & Gustavo Grinblat & Yu-Li Huang & Dan Wang & Xiao-Hui Ye & Xian-Bin Li & Qiaoliang Bao & AndrewThye-Shen Wee & Stefan A Maier & Qi-Dai Chen & Min-Lin Zhong & Cheng-, 2017.
"Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer,"
Nature Communications, Nature, vol. 8(1), pages 1-8, April.
Handle:
RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms13906
DOI: 10.1038/ncomms13906
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