Author
Listed:
- Georgi Diankov
(Stanford University)
- Chi-Te Liang
(Stanford University
National Taiwan University)
- François Amet
(Duke University
Appalachian State University)
- Patrick Gallagher
(Stanford University)
- Menyoung Lee
(Stanford University)
- Andrew J. Bestwick
(Stanford University)
- Kevin Tharratt
(Stanford University)
- William Coniglio
(National High Magnetic Field Laboratory)
- Jan Jaroszynski
(National High Magnetic Field Laboratory)
- Kenji Watanabe
(Advanced Materials Laboratory, National Institute for Materials Science)
- Takashi Taniguchi
(Advanced Materials Laboratory, National Institute for Materials Science)
- David Goldhaber-Gordon
(Stanford University)
Abstract
The fractional quantum Hall effect is a canonical example of electron–electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N≥2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N=2 Landau level (filling factors 4
Suggested Citation
Georgi Diankov & Chi-Te Liang & François Amet & Patrick Gallagher & Menyoung Lee & Andrew J. Bestwick & Kevin Tharratt & William Coniglio & Jan Jaroszynski & Kenji Watanabe & Takashi Taniguchi & David, 2016.
"Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene,"
Nature Communications, Nature, vol. 7(1), pages 1-6, December.
Handle:
RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms13908
DOI: 10.1038/ncomms13908
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