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Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

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  • Qiang Zhang

    (University of Texas at Austin
    Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics
    University of Science and Technology of China)

  • Yuxuan Chen

    (University of Texas at Austin)

  • Chendong Zhang

    (University of Texas at Austin)

  • Chi-Ruei Pan

    (School of Physics, Georgia Institute of Technology)

  • Mei-Yin Chou

    (School of Physics, Georgia Institute of Technology
    Institute of Atomic and Molecular Sciences, Academia Sinica
    National Taiwan University)

  • Changgan Zeng

    (Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics
    University of Science and Technology of China
    International Center for Quantum Design of Functional Materials (ICQD), HFNL, University of Science and Technology of China
    Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China)

  • Chih-Kang Shih

    (University of Texas at Austin)

Abstract

The van der Waals interaction in vertical heterostructures made of two-dimensional (2D) materials relaxes the requirement of lattice matching, therefore enabling great design flexibility to tailor novel 2D electronic systems. Here we report the successful growth of MoSe2 on single-layer hexagonal boron nitride (hBN) on the Ru(0001) substrate using molecular beam epitaxy. Using scanning tunnelling microscopy and spectroscopy, we found that the quasi-particle bandgap of MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru, which causes residual metallic screening from the substrate. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ∼0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.

Suggested Citation

  • Qiang Zhang & Yuxuan Chen & Chendong Zhang & Chi-Ruei Pan & Mei-Yin Chou & Changgan Zeng & Chih-Kang Shih, 2016. "Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures," Nature Communications, Nature, vol. 7(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms13843
    DOI: 10.1038/ncomms13843
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