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Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

Author

Listed:
  • Anh Tuan Duong

    (University of Ulsan)

  • Van Quang Nguyen

    (University of Ulsan)

  • Ganbat Duvjir

    (University of Ulsan)

  • Van Thiet Duong

    (University of Ulsan)

  • Suyong Kwon

    (Korea Research Institute of Standards and Science (KRISS))

  • Jae Yong Song

    (Korea Research Institute of Standards and Science (KRISS))

  • Jae Ki Lee

    (Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute (KERI))

  • Ji Eun Lee

    (Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute (KERI))

  • SuDong Park

    (Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute (KERI))

  • Taewon Min

    (Pusan National University)

  • Jaekwang Lee

    (Pusan National University)

  • Jungdae Kim

    (University of Ulsan)

  • Sunglae Cho

    (University of Ulsan)

Abstract

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of −2.1 × 1019 cm−3 at 773 K.

Suggested Citation

  • Anh Tuan Duong & Van Quang Nguyen & Ganbat Duvjir & Van Thiet Duong & Suyong Kwon & Jae Yong Song & Jae Ki Lee & Ji Eun Lee & SuDong Park & Taewon Min & Jaekwang Lee & Jungdae Kim & Sunglae Cho, 2016. "Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals," Nature Communications, Nature, vol. 7(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms13713
    DOI: 10.1038/ncomms13713
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    Cited by:

    1. Zhu, Yuxiao & Newbrook, Daniel W. & Dai, Peng & de Groot, C.H. Kees & Huang, Ruomeng, 2022. "Artificial neural network enabled accurate geometrical design and optimisation of thermoelectric generator," Applied Energy, Elsevier, vol. 305(C).
    2. Bingchao Qin & Dongyang Wang & Tao Hong & Yuping Wang & Dongrui Liu & Ziyuan Wang & Xiang Gao & Zhen-Hua Ge & Li-Dong Zhao, 2023. "High thermoelectric efficiency realized in SnSe crystals via structural modulation," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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