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A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Author

Listed:
  • Wenjian Liu

    (School of Materials Science and Engineering, Tsinghua University)

  • Hongxia Zhang

    (School of Materials Science and Engineering, Tsinghua University)

  • Jin-an Shi

    (Beijing Laboratory for Electron Microscopy, Institute of Physics, CAS)

  • Zhongchang Wang

    (WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University)

  • Cheng Song

    (School of Materials Science and Engineering, Tsinghua University)

  • Xiangrong Wang

    (The Hong Kong University of Science and Technology
    HKUST Shenzhen Research Institute)

  • Siyuan Lu

    (School of Materials Science and Engineering, Tsinghua University)

  • Xiangjun Zhou

    (School of Materials Science and Engineering, Tsinghua University)

  • Lin Gu

    (Beijing Laboratory for Electron Microscopy, Institute of Physics, CAS)

  • Dmitri V. Louzguine-Luzgin

    (WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University)

  • Mingwei Chen

    (WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University)

  • Kefu Yao

    (School of Materials Science and Engineering, Tsinghua University)

  • Na Chen

    (School of Materials Science and Engineering, Tsinghua University)

Abstract

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V−1 s−1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

Suggested Citation

  • Wenjian Liu & Hongxia Zhang & Jin-an Shi & Zhongchang Wang & Cheng Song & Xiangrong Wang & Siyuan Lu & Xiangjun Zhou & Lin Gu & Dmitri V. Louzguine-Luzgin & Mingwei Chen & Kefu Yao & Na Chen, 2016. "A room-temperature magnetic semiconductor from a ferromagnetic metallic glass," Nature Communications, Nature, vol. 7(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms13497
    DOI: 10.1038/ncomms13497
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