Author
Listed:
- Woo Jong Yu
(University of California
Sungkyunkwan University
Samsung-SKKU Graphene Center (SSGC))
- Quoc An Vu
(Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Sungkyunkwan University
Sungkyunkwan University)
- Hyemin Oh
(Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Sungkyunkwan University)
- Hong Gi Nam
(Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Sungkyunkwan University)
- Hailong Zhou
(University of California)
- Soonyoung Cha
(School of Electrical and Electronic Engineering, Yonsei University)
- Joo-Youn Kim
(School of Electrical and Electronic Engineering, Yonsei University)
- Alexandra Carvalho
(Centre for Advanced 2D Materials, National University of Singapore)
- Munseok Jeong
(Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Sungkyunkwan University)
- Hyunyong Choi
(School of Electrical and Electronic Engineering, Yonsei University)
- A. H. Castro Neto
(Centre for Advanced 2D Materials, National University of Singapore)
- Young Hee Lee
(Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)
Sungkyunkwan University
Sungkyunkwan University)
- Xiangfeng Duan
(University of California
California Nanosystems Institute, University of California)
Abstract
Two-dimensional layered transition-metal dichalcogenides have attracted considerable interest for their unique layer-number-dependent properties. In particular, vertical integration of these two-dimensional crystals to form van der Waals heterostructures can open up a new dimension for the design of functional electronic and optoelectronic devices. Here we report the layer-number-dependent photocurrent generation in graphene/MoS2/graphene heterostructures by creating a device with two distinct regions containing one-layer and seven-layer MoS2 to exclude other extrinsic factors. Photoresponse studies reveal that photoresponsivity in one-layer MoS2 is surprisingly higher than that in seven-layer MoS2 by seven times. Spectral-dependent studies further show that the internal quantum efficiency in one-layer MoS2 can reach a maximum of 65%, far higher than the 7% in seven-layer MoS2. Our theoretical modelling shows that asymmetric potential barriers in the top and bottom interfaces of the graphene/one-layer MoS2/graphene heterojunction enable asymmetric carrier tunnelling, to generate usually high photoresponsivity in one-layer MoS2 device.
Suggested Citation
Woo Jong Yu & Quoc An Vu & Hyemin Oh & Hong Gi Nam & Hailong Zhou & Soonyoung Cha & Joo-Youn Kim & Alexandra Carvalho & Munseok Jeong & Hyunyong Choi & A. H. Castro Neto & Young Hee Lee & Xiangfeng Du, 2016.
"Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriers,"
Nature Communications, Nature, vol. 7(1), pages 1-9, December.
Handle:
RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms13278
DOI: 10.1038/ncomms13278
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