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Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

Author

Listed:
  • Jangyup Son

    (Yonsei University)

  • Soogil Lee

    (Yonsei University)

  • Sang Jin Kim

    (Seoul National University)

  • Byung Cheol Park

    (Yonsei University)

  • Han-Koo Lee

    (Pohang Accelerator Laboratory)

  • Sanghoon Kim

    (Yonsei University)

  • Jae Hoon Kim

    (Yonsei University)

  • Byung Hee Hong

    (Seoul National University)

  • Jongill Hong

    (Yonsei University)

Abstract

Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.

Suggested Citation

  • Jangyup Son & Soogil Lee & Sang Jin Kim & Byung Cheol Park & Han-Koo Lee & Sanghoon Kim & Jae Hoon Kim & Byung Hee Hong & Jongill Hong, 2016. "Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor," Nature Communications, Nature, vol. 7(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms13261
    DOI: 10.1038/ncomms13261
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