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Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

Author

Listed:
  • Zefei Wu

    (the Hong Kong University of Science and Technology)

  • Shuigang Xu

    (the Hong Kong University of Science and Technology)

  • Huanhuan Lu

    (the Hong Kong University of Science and Technology)

  • Armin Khamoshi

    (University of Texas at Dallas)

  • Gui-Bin Liu

    (Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology)

  • Tianyi Han

    (the Hong Kong University of Science and Technology)

  • Yingying Wu

    (the Hong Kong University of Science and Technology)

  • Jiangxiazi Lin

    (the Hong Kong University of Science and Technology)

  • Gen Long

    (the Hong Kong University of Science and Technology)

  • Yuheng He

    (the Hong Kong University of Science and Technology)

  • Yuan Cai

    (the Hong Kong University of Science and Technology)

  • Yugui Yao

    (Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology)

  • Fan Zhang

    (University of Texas at Dallas)

  • Ning Wang

    (the Hong Kong University of Science and Technology)

Abstract

In few-layer transition metal dichalcogenides (TMDCs), the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by threefold rotational symmetry and time reversal symmetry. In even layers, the extra inversion symmetry requires all states to be Kramers degenerate; whereas in odd layers, the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. Here we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons in few-layer TMDCs. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices, which provide a crucial information for understanding the unique properties of multi-valley band structures of few-layer TMDCs.

Suggested Citation

  • Zefei Wu & Shuigang Xu & Huanhuan Lu & Armin Khamoshi & Gui-Bin Liu & Tianyi Han & Yingying Wu & Jiangxiazi Lin & Gen Long & Yuheng He & Yuan Cai & Yugui Yao & Fan Zhang & Ning Wang, 2016. "Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides," Nature Communications, Nature, vol. 7(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms12955
    DOI: 10.1038/ncomms12955
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