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Self-amplified photo-induced gap quenching in a correlated electron material

Author

Listed:
  • S. Mathias

    (I. Physikalisches Institut, Georg-August-Universität Göttingen)

  • S. Eich

    (University of Kaiserslautern)

  • J. Urbancic

    (University of Kaiserslautern)

  • S. Michael

    (University of Kaiserslautern)

  • A. V. Carr

    (JILA, University of Colorado and NIST)

  • S. Emmerich

    (University of Kaiserslautern)

  • A. Stange

    (Institute of Experimental and Applied Physics, University of Kiel)

  • T. Popmintchev

    (JILA, University of Colorado and NIST)

  • T. Rohwer

    (Massachusetts Institute of Technology, Cambridge
    Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge)

  • M. Wiesenmayer

    (University of Kaiserslautern)

  • A. Ruffing

    (University of Kaiserslautern)

  • S. Jakobs

    (University of Kaiserslautern)

  • S. Hellmann

    (Institute of Experimental and Applied Physics, University of Kiel)

  • P. Matyba

    (JILA, University of Colorado and NIST)

  • C. Chen

    (JILA, University of Colorado and NIST)

  • L. Kipp

    (Institute of Experimental and Applied Physics, University of Kiel)

  • M. Bauer

    (Institute of Experimental and Applied Physics, University of Kiel)

  • H. C. Kapteyn

    (JILA, University of Colorado and NIST)

  • H. C. Schneider

    (University of Kaiserslautern)

  • K. Rossnagel

    (Institute of Experimental and Applied Physics, University of Kiel)

  • M. M. Murnane

    (JILA, University of Colorado and NIST)

  • M. Aeschlimann

    (University of Kaiserslautern)

Abstract

Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe2, our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains—on a microscopic level—the extremely fast response of this material to ultrafast optical excitation.

Suggested Citation

  • S. Mathias & S. Eich & J. Urbancic & S. Michael & A. V. Carr & S. Emmerich & A. Stange & T. Popmintchev & T. Rohwer & M. Wiesenmayer & A. Ruffing & S. Jakobs & S. Hellmann & P. Matyba & C. Chen & L. K, 2016. "Self-amplified photo-induced gap quenching in a correlated electron material," Nature Communications, Nature, vol. 7(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms12902
    DOI: 10.1038/ncomms12902
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