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Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Author

Listed:
  • Fucai Liu

    (Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University)

  • Lu You

    (School of Materials Science and Engineering, Nanyang Technological University)

  • Kyle L. Seyler

    (University of Washington)

  • Xiaobao Li

    (School of Civil Engineering, Hefei University of Technology)

  • Peng Yu

    (Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University)

  • Junhao Lin

    (Vanderbilt University
    Oak Ridge National Laboratory
    Present address: National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan)

  • Xuewen Wang

    (Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University)

  • Jiadong Zhou

    (Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University)

  • Hong Wang

    (Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University)

  • Haiyong He

    (Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University)

  • Sokrates T. Pantelides

    (Vanderbilt University
    Oak Ridge National Laboratory)

  • Wu Zhou

    (Oak Ridge National Laboratory)

  • Pradeep Sharma

    (University of Houston)

  • Xiaodong Xu

    (University of Washington)

  • Pulickel M. Ajayan

    (Rice University)

  • Junling Wang

    (School of Materials Science and Engineering, Nanyang Technological University)

  • Zheng Liu

    (Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University
    NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University
    CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza)

Abstract

Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

Suggested Citation

  • Fucai Liu & Lu You & Kyle L. Seyler & Xiaobao Li & Peng Yu & Junhao Lin & Xuewen Wang & Jiadong Zhou & Hong Wang & Haiyong He & Sokrates T. Pantelides & Wu Zhou & Pradeep Sharma & Xiaodong Xu & Pulick, 2016. "Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes," Nature Communications, Nature, vol. 7(1), pages 1-6, November.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms12357
    DOI: 10.1038/ncomms12357
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