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Probing the electrical switching of a memristive optical antenna by STEM EELS

Author

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  • David T. Schoen

    (Geballe Laboratory for Advanced Materials, Stanford University)

  • Aaron L. Holsteen

    (Geballe Laboratory for Advanced Materials, Stanford University)

  • Mark L. Brongersma

    (Geballe Laboratory for Advanced Materials, Stanford University)

Abstract

The scaling of active photonic devices to deep-submicron length scales has been hampered by the fundamental diffraction limit and the absence of materials with sufficiently strong electro-optic effects. Plasmonics is providing new opportunities to circumvent this challenge. Here we provide evidence for a solid-state electro-optical switching mechanism that can operate in the visible spectral range with an active volume of less than (5 nm)3 or ∼10−6 λ3, comparable to the size of the smallest electronic components. The switching mechanism relies on electrochemically displacing metal atoms inside the nanometre-scale gap to electrically connect two crossed metallic wires forming a cross-point junction. These junctions afford extreme light concentration and display singular optical behaviour upon formation of a conductive channel. The active tuning of plasmonic antennas attached to such junctions is analysed using a combination of electrical and optical measurements as well as electron energy loss spectroscopy in a scanning transmission electron microscope.

Suggested Citation

  • David T. Schoen & Aaron L. Holsteen & Mark L. Brongersma, 2016. "Probing the electrical switching of a memristive optical antenna by STEM EELS," Nature Communications, Nature, vol. 7(1), pages 1-7, November.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms12162
    DOI: 10.1038/ncomms12162
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