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Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Author

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  • Tim Burgess

    (Research School of Physics and Engineering, The Australian National University)

  • Dhruv Saxena

    (Research School of Physics and Engineering, The Australian National University)

  • Sudha Mokkapati

    (Research School of Physics and Engineering, The Australian National University)

  • Zhe Li

    (Research School of Physics and Engineering, The Australian National University)

  • Christopher R. Hall

    (Centre for Quantum and Optical Science, Swinburne University of Technology)

  • Jeffrey A. Davis

    (Centre for Quantum and Optical Science, Swinburne University of Technology)

  • Yuda Wang

    (University of Cincinnati)

  • Leigh M. Smith

    (Research School of Physics and Engineering, The Australian National University
    University of Cincinnati)

  • Lan Fu

    (Research School of Physics and Engineering, The Australian National University)

  • Philippe Caroff

    (Research School of Physics and Engineering, The Australian National University)

  • Hark Hoe Tan

    (Research School of Physics and Engineering, The Australian National University)

  • Chennupati Jagadish

    (Research School of Physics and Engineering, The Australian National University)

Abstract

Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications.

Suggested Citation

  • Tim Burgess & Dhruv Saxena & Sudha Mokkapati & Zhe Li & Christopher R. Hall & Jeffrey A. Davis & Yuda Wang & Leigh M. Smith & Lan Fu & Philippe Caroff & Hark Hoe Tan & Chennupati Jagadish, 2016. "Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires," Nature Communications, Nature, vol. 7(1), pages 1-7, September.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11927
    DOI: 10.1038/ncomms11927
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    Cited by:

    1. Mingcheng Panmai & Jin Xiang & Shulei Li & Xiaobing He & Yuhao Ren & Miaoxuan Zeng & Juncong She & Juntao Li & Sheng Lan, 2022. "Highly efficient nonlinear optical emission from a subwavelength crystalline silicon cuboid mediated by supercavity mode," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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