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Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

Author

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  • Yingjie Zhang

    (Applied Science and Technology Graduate Program, University of California
    Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA)

  • Daniel J. Hellebusch

    (Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
    University of California
    Kavli Energy NanoScience Institute)

  • Noah D. Bronstein

    (Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
    Kavli Energy NanoScience Institute
    University of California)

  • Changhyun Ko

    (University of California)

  • D. Frank Ogletree

    (The Molecular Foundry, Lawrence Berkeley National Laboratory)

  • Miquel Salmeron

    (Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
    University of California)

  • A. Paul Alivisatos

    (Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
    Kavli Energy NanoScience Institute
    University of California
    University of California)

Abstract

The sensitivity of semiconductor photodetectors is limited by photocarrier recombination during the carrier transport process. We developed a new photoactive material that reduces recombination by physically separating hole and electron charge carriers. This material has a specific detectivity (the ability to detect small signals) of 5 × 1017 Jones, the highest reported in visible and infrared detectors at room temperature, and 4–5 orders of magnitude higher than that of commercial single-crystal silicon detectors. The material was fabricated by sintering chloride-capped CdTe nanocrystals into polycrystalline films, where Cl selectively segregates into grain boundaries acting as n-type dopants. Photogenerated electrons concentrate in and percolate along the grain boundaries—a network of energy valleys, while holes are confined in the grain interiors. This electrostatic field-assisted carrier separation and percolation mechanism enables an unprecedented photoconductive gain of 1010 e− per photon, and allows for effective control of the device response speed by active carrier quenching.

Suggested Citation

  • Yingjie Zhang & Daniel J. Hellebusch & Noah D. Bronstein & Changhyun Ko & D. Frank Ogletree & Miquel Salmeron & A. Paul Alivisatos, 2016. "Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport," Nature Communications, Nature, vol. 7(1), pages 1-9, September.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11924
    DOI: 10.1038/ncomms11924
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    Cited by:

    1. Jing Pan & Yiming Wu & Xiujuan Zhang & Jinhui Chen & Jinwen Wang & Shuiling Cheng & Xiaofeng Wu & Xiaohong Zhang & Jiansheng Jie, 2022. "Anisotropic charge trapping in phototransistors unlocks ultrasensitive polarimetry for bionic navigation," Nature Communications, Nature, vol. 13(1), pages 1-11, December.

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