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Atomic-scale disproportionation in amorphous silicon monoxide

Author

Listed:
  • Akihiko Hirata

    (WPI Advanced Institute for Materials Research, Tohoku University)

  • Shinji Kohara

    (Quantum Beam Unit, National Institute for Materials Science (NIMS)
    Information Integrated Materials Research Unit, Research Center for Information Integrated Materials, NIMS
    Japan Synchrotron Radiation Research Institute
    Schools of Materials Science, Japan Advanced Institute of Science and Technology)

  • Toshihiro Asada

    (NISSAN ARC Ltd.)

  • Masazumi Arao

    (NISSAN ARC Ltd.)

  • Chihiro Yogi

    (NISSAN ARC Ltd.)

  • Hideto Imai

    (NISSAN ARC Ltd.)

  • Yongwen Tan

    (WPI Advanced Institute for Materials Research, Tohoku University
    State Key Laboratory of Metal Matrix Composites and School of Materials Science and Engineering, Shanghai Jiao Tong University)

  • Takeshi Fujita

    (WPI Advanced Institute for Materials Research, Tohoku University)

  • Mingwei Chen

    (WPI Advanced Institute for Materials Research, Tohoku University
    State Key Laboratory of Metal Matrix Composites and School of Materials Science and Engineering, Shanghai Jiao Tong University
    JST, CREST)

Abstract

Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material.

Suggested Citation

  • Akihiko Hirata & Shinji Kohara & Toshihiro Asada & Masazumi Arao & Chihiro Yogi & Hideto Imai & Yongwen Tan & Takeshi Fujita & Mingwei Chen, 2016. "Atomic-scale disproportionation in amorphous silicon monoxide," Nature Communications, Nature, vol. 7(1), pages 1-7, September.
  • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11591
    DOI: 10.1038/ncomms11591
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    Cited by:

    1. Guoyu Qian & Yiwei Li & Haibiao Chen & Lin Xie & Tongchao Liu & Ni Yang & Yongli Song & Cong Lin & Junfang Cheng & Naotoshi Nakashima & Meng Zhang & Zikun Li & Wenguang Zhao & Xiangjie Yang & Hai Lin , 2023. "Revealing the aging process of solid electrolyte interphase on SiOx anode," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    2. Linus C. Erhard & Jochen Rohrer & Karsten Albe & Volker L. Deringer, 2024. "Modelling atomic and nanoscale structure in the silicon–oxygen system through active machine learning," Nature Communications, Nature, vol. 15(1), pages 1-12, December.

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