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Tunnel electroresistance through organic ferroelectrics

Author

Listed:
  • B. B. Tian

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay)

  • J. L. Wang

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences)

  • S. Fusil

    (Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay)

  • Y. Liu

    (Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay)

  • X. L. Zhao

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • S. Sun

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences)

  • H. Shen

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences)

  • T. Lin

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences)

  • J. L. Sun

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences)

  • C. G. Duan

    (Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University)

  • M. Bibes

    (Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay)

  • A. Barthélémy

    (Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay)

  • B. Dkhil

    (Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay)

  • V. Garcia

    (Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay)

  • X. J. Meng

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences)

  • J. H. Chu

    (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
    Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University)

Abstract

Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates.

Suggested Citation

  • B. B. Tian & J. L. Wang & S. Fusil & Y. Liu & X. L. Zhao & S. Sun & H. Shen & T. Lin & J. L. Sun & C. G. Duan & M. Bibes & A. Barthélémy & B. Dkhil & V. Garcia & X. J. Meng & J. H. Chu, 2016. "Tunnel electroresistance through organic ferroelectrics," Nature Communications, Nature, vol. 7(1), pages 1-6, September.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11502
    DOI: 10.1038/ncomms11502
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    Cited by:

    1. Guangdi Feng & Qiuxiang Zhu & Xuefeng Liu & Luqiu Chen & Xiaoming Zhao & Jianquan Liu & Shaobing Xiong & Kexiang Shan & Zhenzhong Yang & Qinye Bao & Fangyu Yue & Hui Peng & Rong Huang & Xiaodong Tang , 2024. "A ferroelectric fin diode for robust non-volatile memory," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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