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Giant spin-torque diode sensitivity in the absence of bias magnetic field

Author

Listed:
  • Bin Fang

    (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences)

  • Mario Carpentieri

    (Polytechnic of Bari)

  • Xiaojie Hao

    (University of California)

  • Hongwen Jiang

    (University of California)

  • Jordan A. Katine

    (HGST Inc)

  • Ilya N. Krivorotov

    (University of California)

  • Berthold Ocker

    (Singulus Technologies)

  • Juergen Langer

    (Singulus Technologies)

  • Kang L. Wang

    (University of California)

  • Baoshun Zhang

    (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences)

  • Bruno Azzerboni

    (University of Messina)

  • Pedram Khalili Amiri

    (University of California)

  • Giovanni Finocchio

    (Physical Sciences and Earth Sciences, University of Messina)

  • Zhongming Zeng

    (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences)

Abstract

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Suggested Citation

  • Bin Fang & Mario Carpentieri & Xiaojie Hao & Hongwen Jiang & Jordan A. Katine & Ilya N. Krivorotov & Berthold Ocker & Juergen Langer & Kang L. Wang & Baoshun Zhang & Bruno Azzerboni & Pedram Khalili A, 2016. "Giant spin-torque diode sensitivity in the absence of bias magnetic field," Nature Communications, Nature, vol. 7(1), pages 1-7, September.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11259
    DOI: 10.1038/ncomms11259
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