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Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

Author

Listed:
  • Wei Jin Hu

    (Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST))

  • Zhihong Wang

    (Advanced Nanofabrication Core Lab, King Abdullah University of Science and Technology (KAUST))

  • Weili Yu

    (Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST))

  • Tom Wu

    (Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST))

Abstract

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

Suggested Citation

  • Wei Jin Hu & Zhihong Wang & Weili Yu & Tom Wu, 2016. "Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions," Nature Communications, Nature, vol. 7(1), pages 1-9, April.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10808
    DOI: 10.1038/ncomms10808
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    Cited by:

    1. Yueyang Jia & Qianqian Yang & Yue-Wen Fang & Yue Lu & Maosong Xie & Jianyong Wei & Jianjun Tian & Linxing Zhang & Rui Yang, 2024. "Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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