Author
Listed:
- Achim Woessner
(ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology)
- Pablo Alonso-González
(CIC nanoGUNE
Institute of Physics, Chinese Academy of Science)
- Mark B. Lundeberg
(ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology)
- Yuanda Gao
(Columbia University, New York)
- Jose E. Barrios-Vargas
(Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB)
- Gabriele Navickaite
(ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology)
- Qiong Ma
(Massachusetts Institute of Technology)
- Davide Janner
(ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology)
- Kenji Watanabe
(National Institute for Materials Science)
- Aron W. Cummings
(Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB)
- Takashi Taniguchi
(National Institute for Materials Science)
- Valerio Pruneri
(ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010)
- Stephan Roche
(Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010)
- Pablo Jarillo-Herrero
(Massachusetts Institute of Technology)
- James Hone
(Columbia University, New York)
- Rainer Hillenbrand
(CIC nanoGUNE and UPV/EHU
IKERBASQUE, Basque Foundation for Science)
- Frank H. L. Koppens
(ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010)
Abstract
Optoelectronic devices utilizing graphene have demonstrated unique capabilities and performances beyond state-of-the-art technologies. However, requirements in terms of device quality and uniformity are demanding. A major roadblock towards high-performance devices are nanoscale variations of the graphene device properties, impacting their macroscopic behaviour. Here we present and apply non-invasive optoelectronic nanoscopy to measure the optical and electronic properties of graphene devices locally. This is achieved by combining scanning near-field infrared nanoscopy with electrical read-out, allowing infrared photocurrent mapping at length scales of tens of nanometres. Using this technique, we study the impact of edges and grain boundaries on the spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can readily be applied to encapsulated graphene devices. We observe charge build-up near the edges and demonstrate a solution to this issue.
Suggested Citation
Achim Woessner & Pablo Alonso-González & Mark B. Lundeberg & Yuanda Gao & Jose E. Barrios-Vargas & Gabriele Navickaite & Qiong Ma & Davide Janner & Kenji Watanabe & Aron W. Cummings & Takashi Taniguch, 2016.
"Near-field photocurrent nanoscopy on bare and encapsulated graphene,"
Nature Communications, Nature, vol. 7(1), pages 1-7, April.
Handle:
RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10783
DOI: 10.1038/ncomms10783
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