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Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction

Author

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  • Chendong Zhang

    (University of Texas at Austin)

  • Yuxuan Chen

    (University of Texas at Austin)

  • Jing-Kai Huang

    (University of Texas at Austin
    King Abdullah University of Science and Technology)

  • Xianxin Wu

    (University of Hong Kong
    Institute of Physics, Chinese Academy of Sciences)

  • Lain-Jong Li

    (King Abdullah University of Science and Technology)

  • Wang Yao

    (University of Hong Kong)

  • Jerry Tersoff

    (T.J. Watson Research Center)

  • Chih-Kang Shih

    (University of Texas at Austin)

Abstract

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thicknesses. Here we show the real space image of electronic structures across the bilayer–monolayer interface in MoSe2 and WSe2, using scanning tunnelling microscopy and spectroscopy. Most bilayer–monolayer HJs are found to have a zig-zag-orientated interface, and the band alignment of such atomically sharp HJs is of type-I with a well-defined interface mode that acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terraces as lateral HJs is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

Suggested Citation

  • Chendong Zhang & Yuxuan Chen & Jing-Kai Huang & Xianxin Wu & Lain-Jong Li & Wang Yao & Jerry Tersoff & Chih-Kang Shih, 2016. "Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction," Nature Communications, Nature, vol. 7(1), pages 1-6, April.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10349
    DOI: 10.1038/ncomms10349
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    Cited by:

    1. Benjamin I. Weintrub & Yu-Ling Hsieh & Sviatoslav Kovalchuk & Jan N. Kirchhof & Kyrylo Greben & Kirill I. Bolotin, 2022. "Generating intense electric fields in 2D materials by dual ionic gating," Nature Communications, Nature, vol. 13(1), pages 1-6, December.
    2. Meizhuang Liu & Jian Gou & Zizhao Liu & Zuxin Chen & Yuliang Ye & Jing Xu & Xiaozhi Xu & Dingyong Zhong & Goki Eda & Andrew T. S. Wee, 2024. "Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    3. Qi Zheng & Yu-Chen Zhuang & Qing-Feng Sun & Lin He, 2022. "Coexistence of electron whispering-gallery modes and atomic collapse states in graphene/WSe2 heterostructure quantum dots," Nature Communications, Nature, vol. 13(1), pages 1-6, December.

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