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Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

Author

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  • Changjiang Liu

    (School of Physics and Astronomy, University of Minnesota)

  • Sahil J. Patel

    (University of California)

  • Timothy A. Peterson

    (School of Physics and Astronomy, University of Minnesota)

  • Chad C. Geppert

    (School of Physics and Astronomy, University of Minnesota)

  • Kevin D. Christie

    (School of Physics and Astronomy, University of Minnesota)

  • Gordon Stecklein

    (School of Physics and Astronomy, University of Minnesota)

  • Chris J. Palmstrøm

    (University of California
    University of California)

  • Paul A. Crowell

    (School of Physics and Astronomy, University of Minnesota)

Abstract

A distinguishing feature of spin accumulation in ferromagnet–semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this approach enables a measurement of short spin lifetimes (

Suggested Citation

  • Changjiang Liu & Sahil J. Patel & Timothy A. Peterson & Chad C. Geppert & Kevin D. Christie & Gordon Stecklein & Chris J. Palmstrøm & Paul A. Crowell, 2016. "Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance," Nature Communications, Nature, vol. 7(1), pages 1-7, April.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10296
    DOI: 10.1038/ncomms10296
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