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Strain effects on the work function of an organic semiconductor

Author

Listed:
  • Yanfei Wu

    (University of Minnesota)

  • Annabel R. Chew

    (Stanford University)

  • Geoffrey A. Rojas

    (University of Minnesota)

  • Gjergji Sini

    (Laboratoire de Physico-chimie des Polymères et des Interfaces, Université de Cergy-Pontoise
    Solar & Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology (KAUST))

  • Greg Haugstad

    (Characterization Facility, University of Minnesota)

  • Alex Belianinov

    (Center for Nanophase Materials Sciences, Oak Ridge National Laboratory)

  • Sergei V. Kalinin

    (Center for Nanophase Materials Sciences, Oak Ridge National Laboratory)

  • Hong Li

    (School of Chemistry and Biochemistry & Center for Organic Photonics and Electronics, Georgia Institute of Technology)

  • Chad Risko

    (University of Kentucky)

  • Jean-Luc Brédas

    (Solar & Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology (KAUST))

  • Alberto Salleo

    (Stanford University)

  • C. Daniel Frisbie

    (University of Minnesota)

Abstract

Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ∼0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.

Suggested Citation

  • Yanfei Wu & Annabel R. Chew & Geoffrey A. Rojas & Gjergji Sini & Greg Haugstad & Alex Belianinov & Sergei V. Kalinin & Hong Li & Chad Risko & Jean-Luc Brédas & Alberto Salleo & C. Daniel Frisbie, 2016. "Strain effects on the work function of an organic semiconductor," Nature Communications, Nature, vol. 7(1), pages 1-9, April.
  • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10270
    DOI: 10.1038/ncomms10270
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    Cited by:

    1. Xiaosong Chen & Zhongwu Wang & Jiannan Qi & Yongxu Hu & Yinan Huang & Shougang Sun & Yajing Sun & Wenbin Gong & Langli Luo & Lifeng Zhang & Haiyan Du & Xiaoxia Hu & Cheng Han & Jie Li & Deyang Ji & Li, 2022. "Balancing the film strain of organic semiconductors for ultrastable organic transistors with a five-year lifetime," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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