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Spin-dependent recombination probed through the dielectric polarizability

Author

Listed:
  • Sam L. Bayliss

    (Cavendish Laboratory, University of Cambridge)

  • Neil C. Greenham

    (Cavendish Laboratory, University of Cambridge)

  • Richard H. Friend

    (Cavendish Laboratory, University of Cambridge)

  • Hélène Bouchiat

    (LPS, Université Paris-Sud, CNRS)

  • Alexei D Chepelianskii

    (Cavendish Laboratory, University of Cambridge
    LPS, Université Paris-Sud, CNRS)

Abstract

Despite residing in an energetically and structurally disordered landscape, the spin degree of freedom remains a robust quantity in organic semiconductor materials due to the weak coupling of spin and orbital states. This enforces spin-selectivity in recombination processes which plays a crucial role in optoelectronic devices, for example, in the spin-dependent recombination of weakly bound electron-hole pairs, or charge-transfer states, which form in a photovoltaic blend. Here, we implement a detection scheme to probe the spin-selective recombination of these states through changes in their dielectric polarizability under magnetic resonance. Using this technique, we access a regime in which the usual mixing of spin-singlet and spin-triplet states due to hyperfine fields is suppressed by microwave driving. We present a quantitative model for this behaviour which allows us to estimate the spin-dependent recombination rate, and draw parallels with the Majorana–Brossel resonances observed in atomic physics experiments.

Suggested Citation

  • Sam L. Bayliss & Neil C. Greenham & Richard H. Friend & Hélène Bouchiat & Alexei D Chepelianskii, 2015. "Spin-dependent recombination probed through the dielectric polarizability," Nature Communications, Nature, vol. 6(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms9534
    DOI: 10.1038/ncomms9534
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