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Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals

Author

Listed:
  • Sotirios Christodoulou

    (Istituto Italiano di Tecnologia
    University of Genoa)

  • Fernando Rajadell

    (Departament de Quimica Fisica i Analitica, Universitat Jaume I)

  • Alberto Casu

    (Istituto Italiano di Tecnologia)

  • Gianfranco Vaccaro

    (Università degli Studi di Milano-Bicocca)

  • Joel Q. Grim

    (Istituto Italiano di Tecnologia)

  • Alessandro Genovese

    (Istituto Italiano di Tecnologia)

  • Liberato Manna

    (Istituto Italiano di Tecnologia)

  • Juan I. Climente

    (Departament de Quimica Fisica i Analitica, Universitat Jaume I)

  • Francesco Meinardi

    (Università degli Studi di Milano-Bicocca)

  • Gabriele Rainò

    (IBM Research—Zurich)

  • Thilo Stöferle

    (IBM Research—Zurich)

  • Rainer F. Mahrt

    (IBM Research—Zurich)

  • Josep Planelles

    (Departament de Quimica Fisica i Analitica, Universitat Jaume I)

  • Sergio Brovelli

    (Università degli Studi di Milano-Bicocca)

  • Iwan Moreels

    (Istituto Italiano di Tecnologia)

Abstract

Strain in colloidal heteronanocrystals with non-centrosymmetric lattices presents a unique opportunity for controlling optoelectronic properties and adds a new degree of freedom to existing wavefunction engineering and doping paradigms. We synthesized wurtzite CdSe nanorods embedded in a thick CdS shell, hereby exploiting the large lattice mismatch between the two domains to generate a compressive strain of the CdSe core and a strong piezoelectric potential along its c-axis. Efficient charge separation results in an indirect ground-state transition with a lifetime of several microseconds, almost one order of magnitude longer than any other CdSe/CdS nanocrystal. Higher excited states recombine radiatively in the nanosecond time range, due to increasingly overlapping excited-state orbitals. k˙p calculations confirm the importance of the anisotropic shape and crystal structure in the buildup of the piezoelectric potential. Strain engineering thus presents an efficient approach to highly tunable single- and multiexciton interactions, driven by a dedicated core/shell nanocrystal design.

Suggested Citation

  • Sotirios Christodoulou & Fernando Rajadell & Alberto Casu & Gianfranco Vaccaro & Joel Q. Grim & Alessandro Genovese & Liberato Manna & Juan I. Climente & Francesco Meinardi & Gabriele Rainò & Thilo St, 2015. "Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals," Nature Communications, Nature, vol. 6(1), pages 1-8, November.
  • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8905
    DOI: 10.1038/ncomms8905
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    Cited by:

    1. Junhong Yu & Hilmi Volkan Demir & Manoj Sharma, 2025. "Optical signatures of lattice strain in chemically doped colloidal quantum wells," Nature Communications, Nature, vol. 16(1), pages 1-9, December.

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