Author
Listed:
- A. Varykhalov
(Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II)
- J. Sánchez-Barriga
(Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II)
- D. Marchenko
(Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II
Physikalische und Theoretische Chemie, Freie Universität Berlin)
- P. Hlawenka
(Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II)
- P. S. Mandal
(Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II)
- O. Rader
(Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II)
Abstract
Spin and pseudospin in graphene are known to interact under enhanced spin–orbit interaction giving rise to an in-plane Rashba spin texture. Here we show that Au-intercalated graphene on Fe(110) displays a large (∼230 meV) bandgap with out-of-plane hedgehog-type spin reorientation around the gapped Dirac point. We identify two causes responsible. First, a giant Rashba effect (∼70 meV splitting) away from the Dirac point and, second, the breaking of the six-fold graphene symmetry at the interface. This is demonstrated by a strong one-dimensional anisotropy of the graphene dispersion imposed by the two-fold-symmetric (110) substrate. Surprisingly, the graphene Fermi level is systematically tuned by the Au concentration and can be moved into the bandgap. We conclude that the out-of-plane spin texture is not only of fundamental interest but can be tuned at the Fermi level as a model for electrical gating of spin in a spintronic device.
Suggested Citation
A. Varykhalov & J. Sánchez-Barriga & D. Marchenko & P. Hlawenka & P. S. Mandal & O. Rader, 2015.
"Tunable Fermi level and hedgehog spin texture in gapped graphene,"
Nature Communications, Nature, vol. 6(1), pages 1-6, November.
Handle:
RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8610
DOI: 10.1038/ncomms8610
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