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Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers

Author

Listed:
  • O. M. J. van ’t Erve

    (Naval Research Laboratory)

  • A. L. Friedman

    (Naval Research Laboratory)

  • C. H. Li

    (Naval Research Laboratory)

  • J. T. Robinson

    (Naval Research Laboratory)

  • J. Connell

    (Northwestern University)

  • L. J. Lauhon

    (Northwestern University)

  • B. T. Jonker

    (Naval Research Laboratory)

Abstract

Spin-based devices offer non-volatile, scalable, low power and reprogrammable functionality for emerging device technologies. Here we fabricate nanoscale spintronic devices with ferromagnetic metal/single-layer graphene tunnel barriers used to generate spin accumulation and spin currents in a silicon nanowire transport channel. We report the first observation of spin precession via the Hanle effect in both local three-terminal and non-local spin-valve geometries, providing a direct measure of spin lifetimes and confirmation of spin accumulation and pure spin transport. The use of graphene as the tunnel barrier provides a low-resistance area product contact and clean magnetic switching characteristics, because it smoothly bridges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic behaviour. Utilizing intrinsic two-dimensional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers many advantages over conventional materials deposited by vapour deposition, enabling a path to highly scaled electronic and spintronic devices.

Suggested Citation

  • O. M. J. van ’t Erve & A. L. Friedman & C. H. Li & J. T. Robinson & J. Connell & L. J. Lauhon & B. T. Jonker, 2015. "Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers," Nature Communications, Nature, vol. 6(1), pages 1-8, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8541
    DOI: 10.1038/ncomms8541
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