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Nanoscale memristive radiofrequency switches

Author

Listed:
  • Shuang Pi

    (Nanodevices and Integrated Systems Laboratory, University of Massachusetts)

  • Mohammad Ghadiri-Sadrabadi

    (Radio Frequency Nanoelectronics Group, University of Massachusetts)

  • Joseph C. Bardin

    (Radio Frequency Nanoelectronics Group, University of Massachusetts)

  • Qiangfei Xia

    (Nanodevices and Integrated Systems Laboratory, University of Massachusetts)

Abstract

Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a nanoscale radiofrequency switch based on a memristive device. The device can be programmed with a voltage as low as 0.4 V and has an ON/OFF conductance ratio up to 1012 with long state retention. We measure the radiofrequency performance of the switch up to 110 GHz and demonstrate low insertion loss (0.3 dB at 40 GHz), high isolation (30 dB at 40 GHz), an average cutoff frequency of 35 THz and competitive linearity and power-handling capability. Our results suggest that, in addition to their application in memory and computing, memristive devices are also a leading contender for radiofrequency switch applications.

Suggested Citation

  • Shuang Pi & Mohammad Ghadiri-Sadrabadi & Joseph C. Bardin & Qiangfei Xia, 2015. "Nanoscale memristive radiofrequency switches," Nature Communications, Nature, vol. 6(1), pages 1-9, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8519
    DOI: 10.1038/ncomms8519
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