Author
Listed:
- V. T. Renard
(Université Grenoble Alpes/CEA, INAC-SPSMS)
- B. A. Piot
(Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA-EMFL)
- X. Waintal
(Université Grenoble Alpes/CEA, INAC-SPSMS)
- G. Fleury
(Service de Physique de l’État Condensé, DSM/IRAMIS/SPEC)
- D. Cooper
(Université Grenoble Alpes/CEA Leti Minatec campus)
- Y. Niida
(Graduate School of Science, Tohoku University)
- D. Tregurtha
(University of Bath)
- A. Fujiwara
(NTT Basic Research Laboratories, NTT Corporation)
- Y. Hirayama
(Graduate School of Science, Tohoku University)
- K. Takashina
(University of Bath)
Abstract
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two-dimensional systems, valley polarization can dramatically modify physical properties through electron–electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons’ spin alignment in a magnetic field in silicon-on-insulator quantum wells under valley polarization. In stark contrast to expectations from a non-interacting model, we show experimentally that less magnetic field can be required to fully spin polarize a valley-polarized system than a valley-degenerate one. Furthermore, we show that these observations are quantitatively described by parameter-free ab initio quantum Monte Carlo simulations. We interpret the results as a manifestation of the greater stability of the spin- and valley-degenerate system against ferromagnetic instability and Wigner crystalization, which in turn suggests the existence of a new strongly correlated electron liquid at low electron densities.
Suggested Citation
V. T. Renard & B. A. Piot & X. Waintal & G. Fleury & D. Cooper & Y. Niida & D. Tregurtha & A. Fujiwara & Y. Hirayama & K. Takashina, 2015.
"Valley polarization assisted spin polarization in two dimensions,"
Nature Communications, Nature, vol. 6(1), pages 1-8, November.
Handle:
RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8230
DOI: 10.1038/ncomms8230
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