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Active graphene–silicon hybrid diode for terahertz waves

Author

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  • Quan Li

    (Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education)
    School of Electrical and Computer Engineering, Oklahoma State University)

  • Zhen Tian

    (Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education))

  • Xueqian Zhang

    (Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education))

  • Ranjan Singh

    (Center for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University)

  • Liangliang Du

    (Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education))

  • Jianqiang Gu

    (Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education))

  • Jiaguang Han

    (Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education))

  • Weili Zhang

    (Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education)
    School of Electrical and Computer Engineering, Oklahoma State University)

Abstract

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Suggested Citation

  • Quan Li & Zhen Tian & Xueqian Zhang & Ranjan Singh & Liangliang Du & Jianqiang Gu & Jiaguang Han & Weili Zhang, 2015. "Active graphene–silicon hybrid diode for terahertz waves," Nature Communications, Nature, vol. 6(1), pages 1-6, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8082
    DOI: 10.1038/ncomms8082
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