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Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

Author

Listed:
  • F. Lafont

    (LNE—Laboratoire National de Métrologie et d’Essais)

  • R. Ribeiro-Palau

    (LNE—Laboratoire National de Métrologie et d’Essais)

  • D. Kazazis

    (LPN—Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France)

  • A. Michon

    (CRHEA—Centre de Recherche sur l’Hétéroépitaxie et ses Applications, CNRS, rue Bernard Grégory, 06560 Valbonne, France)

  • O. Couturaud

    (L2C—Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, Place Eugène Bataillon, 34095 Montpellier, France)

  • C. Consejo

    (L2C—Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, Place Eugène Bataillon, 34095 Montpellier, France)

  • T. Chassagne

    (NOVASiC, Savoie Technolac)

  • M. Zielinski

    (NOVASiC, Savoie Technolac)

  • M. Portail

    (CRHEA—Centre de Recherche sur l’Hétéroépitaxie et ses Applications, CNRS, rue Bernard Grégory, 06560 Valbonne, France)

  • B. Jouault

    (L2C—Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, Place Eugène Bataillon, 34095 Montpellier, France)

  • F. Schopfer

    (LNE—Laboratoire National de Métrologie et d’Essais)

  • W. Poirier

    (LNE—Laboratoire National de Métrologie et d’Essais)

Abstract

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

Suggested Citation

  • F. Lafont & R. Ribeiro-Palau & D. Kazazis & A. Michon & O. Couturaud & C. Consejo & T. Chassagne & M. Zielinski & M. Portail & B. Jouault & F. Schopfer & W. Poirier, 2015. "Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide," Nature Communications, Nature, vol. 6(1), pages 1-9, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7806
    DOI: 10.1038/ncomms7806
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