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Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

Author

Listed:
  • Rostislav A. Doganov

    (Centre for Advanced 2D Materials, National University of Singapore
    National University of Singapore
    Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore)

  • Eoin C. T. O’Farrell

    (Centre for Advanced 2D Materials, National University of Singapore
    National University of Singapore)

  • Steven P. Koenig

    (Centre for Advanced 2D Materials, National University of Singapore
    National University of Singapore)

  • Yuting Yeo

    (Centre for Advanced 2D Materials, National University of Singapore
    National University of Singapore)

  • Angelo Ziletti

    (Boston University)

  • Alexandra Carvalho

    (Centre for Advanced 2D Materials, National University of Singapore)

  • David K. Campbell

    (Boston University)

  • David F. Coker

    (Boston University)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Antonio H. Castro Neto

    (Centre for Advanced 2D Materials, National University of Singapore
    National University of Singapore
    Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore)

  • Barbaros Özyilmaz

    (Centre for Advanced 2D Materials, National University of Singapore
    National University of Singapore
    Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore)

Abstract

Ultrathin black phosphorus is a two-dimensional semiconductor with a sizeable band gap. Its excellent electronic properties make it attractive for applications in transistor, logic and optoelectronic devices. However, it is also the first widely investigated two-dimensional material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical properties and enable applications of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.

Suggested Citation

  • Rostislav A. Doganov & Eoin C. T. O’Farrell & Steven P. Koenig & Yuting Yeo & Angelo Ziletti & Alexandra Carvalho & David K. Campbell & David F. Coker & Kenji Watanabe & Takashi Taniguchi & Antonio H., 2015. "Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere," Nature Communications, Nature, vol. 6(1), pages 1-7, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7647
    DOI: 10.1038/ncomms7647
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    Cited by:

    1. Yue Yuan & Jonas Weber & Junzhu Li & Bo Tian & Yinchang Ma & Xixiang Zhang & Takashi Taniguchi & Kenji Watanabe & Mario Lanza, 2024. "On the quality of commercial chemical vapour deposited hexagonal boron nitride," Nature Communications, Nature, vol. 15(1), pages 1-12, December.
    2. Yuchen Lei & Junwei Ma & Jiaming Luo & Shenyang Huang & Boyang Yu & Chaoyu Song & Qiaoxia Xing & Fanjie Wang & Yuangang Xie & Jiasheng Zhang & Lei Mu & Yixuan Ma & Chong Wang & Hugen Yan, 2023. "Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus," Nature Communications, Nature, vol. 14(1), pages 1-8, December.

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