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Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

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  • Hua-Min Li

    (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU)
    Center for Low Energy Systems Technology (LEAST), University of Notre Dame)

  • Daeyeong Lee

    (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU))

  • Deshun Qu

    (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU))

  • Xiaochi Liu

    (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU))

  • Jungjin Ryu

    (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU))

  • Alan Seabaugh

    (Center for Low Energy Systems Technology (LEAST), University of Notre Dame)

  • Won Jong Yoo

    (Samsung-SKKU Graphene Center (SSGC), SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU))

Abstract

Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p–n junctions are fabricated in ultrathin MoS2 by introducing AuCl3 and benzyl viologen dopants. Unlike usual unipolar MoS2, the MoS2 p–n junctions show ambipolar carrier transport, current rectification via modulation of potential barrier in films thicker than 8 nm and reversed current rectification via tunnelling in films thinner than 8 nm. The ultimate thinness of the vertical p–n homogeneous junctions in MoS2 is experimentally found to be 3 nm, and the chemical doping depth is found to be 1.5 nm. The ultrathin MoS2 p–n junctions present a significant potential of the two-dimensional crystals for flexible, transparent, high-efficiency electronic and optoelectronic applications.

Suggested Citation

  • Hua-Min Li & Daeyeong Lee & Deshun Qu & Xiaochi Liu & Jungjin Ryu & Alan Seabaugh & Won Jong Yoo, 2015. "Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide," Nature Communications, Nature, vol. 6(1), pages 1-9, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7564
    DOI: 10.1038/ncomms7564
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    Cited by:

    1. Yaoqiang Zhou & Lei Tong & Zefeng Chen & Li Tao & Yue Pang & Jian-Bin Xu, 2023. "Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Thanh Luan Phan & Sohyeon Seo & Yunhee Cho & Quoc An Vu & Young Hee Lee & Dinh Loc Duong & Hyoyoung Lee & Woo Jong Yu, 2022. "CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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