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Origin of band gaps in graphene on hexagonal boron nitride

Author

Listed:
  • Jeil Jung

    (Graphene Research Centre, National University of Singapore)

  • Ashley M. DaSilva

    (The University of Texas at Austin)

  • Allan H. MacDonald

    (The University of Texas at Austin)

  • Shaffique Adam

    (Graphene Research Centre, National University of Singapore
    Yale-NUS College)

Abstract

Recent progress in preparing well-controlled two-dimensional van der Waals heterojunctions has opened up a new frontier in materials physics. Here we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behaviour by accounting first for the structural relaxation of graphene’s carbon atoms when placed on a boron nitride substrate, and then for the influence of the substrate on low-energy π-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions.

Suggested Citation

  • Jeil Jung & Ashley M. DaSilva & Allan H. MacDonald & Shaffique Adam, 2015. "Origin of band gaps in graphene on hexagonal boron nitride," Nature Communications, Nature, vol. 6(1), pages 1-11, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7308
    DOI: 10.1038/ncomms7308
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    Cited by:

    1. Everton Arrighi & Viet-Hung Nguyen & Mario Di Luca & Gaia Maffione & Yuanzhuo Hong & Liam Farrar & Kenji Watanabe & Takashi Taniguchi & Dominique Mailly & Jean-Christophe Charlier & Rebeca Ribeiro-Pal, 2023. "Non-identical moiré twins in bilayer graphene," Nature Communications, Nature, vol. 14(1), pages 1-7, December.

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