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Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures

Author

Listed:
  • Xiaolong Chen

    (Hong Kong University of Science and Technology)

  • Zefei Wu

    (Hong Kong University of Science and Technology)

  • Shuigang Xu

    (Hong Kong University of Science and Technology)

  • Lin Wang

    (Group of Applied Physics, University of Geneva)

  • Rui Huang

    (Hong Kong University of Science and Technology
    Hanshan Normal University)

  • Yu Han

    (Hong Kong University of Science and Technology)

  • Weiguang Ye

    (Hong Kong University of Science and Technology)

  • Wei Xiong

    (Hong Kong University of Science and Technology)

  • Tianyi Han

    (Hong Kong University of Science and Technology)

  • Gen Long

    (Hong Kong University of Science and Technology)

  • Yang Wang

    (Hong Kong University of Science and Technology)

  • Yuheng He

    (Hong Kong University of Science and Technology)

  • Yuan Cai

    (Hong Kong University of Science and Technology)

  • Ping Sheng

    (Hong Kong University of Science and Technology)

  • Ning Wang

    (Hong Kong University of Science and Technology)

Abstract

The metal-insulator transition is one of the remarkable electrical properties of atomically thin molybdenum disulphide. Although the theory of electron–electron interactions has been used in modelling the metal-insulator transition in molybdenum disulphide, the underlying mechanism and detailed transition process still remain largely unexplored. Here we demonstrate that the vertical metal-insulator-semiconductor heterostructures built from atomically thin molybdenum disulphide are ideal capacitor structures for probing the electron states. The vertical configuration offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of molybdenum disulphide over a wide excitation frequency and temperature range. By combining capacitance and transport measurements, we have observed a percolation-type metal-insulator transition, driven by density inhomogeneities of electron states, in monolayer and multilayer molybdenum disulphide. In addition, the valence band of thin molybdenum disulphide layers and their intrinsic properties are accessed.

Suggested Citation

  • Xiaolong Chen & Zefei Wu & Shuigang Xu & Lin Wang & Rui Huang & Yu Han & Weiguang Ye & Wei Xiong & Tianyi Han & Gen Long & Yang Wang & Yuheng He & Yuan Cai & Ping Sheng & Ning Wang, 2015. "Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures," Nature Communications, Nature, vol. 6(1), pages 1-8, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7088
    DOI: 10.1038/ncomms7088
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    Cited by:

    1. Xiaona Zhao & Xiao-Li Zhou & Si-Yu Yang & Yuan Min & Jie-Jie Chen & Xian-Wei Liu, 2022. "Plasmonic imaging of the layer-dependent electrocatalytic activity of two-dimensional catalysts," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    2. Bong Gyu Shin & Ji-Hoon Park & Jz-Yuan Juo & Jing Kong & Soon Jung Jung, 2023. "Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors," Nature Communications, Nature, vol. 14(1), pages 1-12, December.

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