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Spin-orbit engineering in transition metal dichalcogenide alloy monolayers

Author

Listed:
  • Gang Wang

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

  • Cedric Robert

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

  • Aslihan Suslu

    (School for Engineering of Matter, Transport and Energy, Arizona State University)

  • Bin Chen

    (School for Engineering of Matter, Transport and Energy, Arizona State University)

  • Sijie Yang

    (School for Engineering of Matter, Transport and Energy, Arizona State University)

  • Sarah Alamdari

    (School for Engineering of Matter, Transport and Energy, Arizona State University)

  • Iann C. Gerber

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

  • Thierry Amand

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

  • Xavier Marie

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

  • Sefaattin Tongay

    (School for Engineering of Matter, Transport and Energy, Arizona State University)

  • Bernhard Urbaszek

    (Université de Toulouse, INSA-CNRS-UPS, LPCNO)

Abstract

Binary transition metal dichalcogenide monolayers share common properties such as a direct optical bandgap, spin-orbit splittings of hundreds of meV, light–matter interaction dominated by robust excitons and coupled spin-valley states. Here we demonstrate spin-orbit-engineering in Mo(1−x)WxSe2 alloy monolayers for optoelectronics and applications based on spin- and valley-control. We probe the impact of the tuning of the conduction band spin-orbit spin-splitting on the bright versus dark exciton population. For MoSe2 monolayers, the photoluminescence intensity decreases as a function of temperature by an order of magnitude (4–300 K), whereas for WSe2 we measure surprisingly an order of magnitude increase. The ternary material shows a trend between these two extreme behaviours. We also show a non-linear increase of the valley polarization as a function of tungsten concentration, where 40% tungsten incorporation is sufficient to achieve valley polarization as high as in binary WSe2.

Suggested Citation

  • Gang Wang & Cedric Robert & Aslihan Suslu & Bin Chen & Sijie Yang & Sarah Alamdari & Iann C. Gerber & Thierry Amand & Xavier Marie & Sefaattin Tongay & Bernhard Urbaszek, 2015. "Spin-orbit engineering in transition metal dichalcogenide alloy monolayers," Nature Communications, Nature, vol. 6(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms10110
    DOI: 10.1038/ncomms10110
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    Cited by:

    1. Hangyong Shan & Ivan Iorsh & Bo Han & Christoph Rupprecht & Heiko Knopf & Falk Eilenberger & Martin Esmann & Kentaro Yumigeta & Kenji Watanabe & Takashi Taniguchi & Sebastian Klembt & Sven Höfling & S, 2022. "Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity," Nature Communications, Nature, vol. 13(1), pages 1-7, December.

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