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Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

Author

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  • Rohit Soni

    (Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel)

  • Adrian Petraru

    (Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel)

  • Paul Meuffels

    (Peter Grünberg Institut, Forschungszentrum Jülich GmbH)

  • Ondrej Vavra

    (Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel)

  • Martin Ziegler

    (Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel)

  • Seong Keun Kim

    (Electronic Materials Research Centre, Korea Institute of Science and Technology)

  • Doo Seok Jeong

    (Electronic Materials Research Centre, Korea Institute of Science and Technology)

  • Nikolay A. Pertsev

    (A. F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences and St. Petersburg State Polytechnical University)

  • Hermann Kohlstedt

    (Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel)

Abstract

Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical (‘redox’-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO3 barrier, La0.7Sr0.3MnO3 bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

Suggested Citation

  • Rohit Soni & Adrian Petraru & Paul Meuffels & Ondrej Vavra & Martin Ziegler & Seong Keun Kim & Doo Seok Jeong & Nikolay A. Pertsev & Hermann Kohlstedt, 2014. "Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions," Nature Communications, Nature, vol. 5(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6414
    DOI: 10.1038/ncomms6414
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    Cited by:

    1. Yunze Gao & Astrid Weston & Vladimir Enaldiev & Xiao Li & Wendong Wang & James E. Nunn & Isaac Soltero & Eli G. Castanon & Amy Carl & Hugo Latour & Alex Summerfield & Matthew Hamer & James Howarth & N, 2024. "Tunnel junctions based on interfacial two dimensional ferroelectrics," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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