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Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

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  • Zheng Liu

    (School of Materials Science and Engineering, Nanyang Technological University
    NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University
    CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza)

  • Matin Amani

    (Sensors and Electron Devices Directorate, US Army Research Laboratory)

  • Sina Najmaei

    (Rice University)

  • Quan Xu

    (University of North Texas
    Institute of New Energy, China University of Petroleum (Beijing))

  • Xiaolong Zou

    (Rice University)

  • Wu Zhou

    (Oak Ridge National Lab)

  • Ting Yu

    (School of Physical and Mathematical Sciences, Nanyang Technological University)

  • Caiyu Qiu

    (School of Physical and Mathematical Sciences, Nanyang Technological University)

  • A. Glen Birdwell

    (Sensors and Electron Devices Directorate, US Army Research Laboratory)

  • Frank J. Crowne

    (Sensors and Electron Devices Directorate, US Army Research Laboratory)

  • Robert Vajtai

    (Rice University)

  • Boris I. Yakobson

    (Rice University)

  • Zhenhai Xia

    (University of North Texas)

  • Madan Dubey

    (Sensors and Electron Devices Directorate, US Army Research Laboratory)

  • Pulickel M. Ajayan

    (Rice University)

  • Jun Lou

    (Rice University)

Abstract

Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapour deposition, but has not yet been fully explored. Here we systematically characterize chemical vapour deposition-grown MoS2 by photoluminescence spectroscopy and mapping and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced bandgap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. Furthermore, our work demonstrates that photoluminescence mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

Suggested Citation

  • Zheng Liu & Matin Amani & Sina Najmaei & Quan Xu & Xiaolong Zou & Wu Zhou & Ting Yu & Caiyu Qiu & A. Glen Birdwell & Frank J. Crowne & Robert Vajtai & Boris I. Yakobson & Zhenhai Xia & Madan Dubey & P, 2014. "Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition," Nature Communications, Nature, vol. 5(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6246
    DOI: 10.1038/ncomms6246
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    Cited by:

    1. Pengfei Yang & Dashuai Wang & Xiaoxu Zhao & Wenzhi Quan & Qi Jiang & Xuan Li & Bin Tang & Jingyi Hu & Lijie Zhu & Shuangyuan Pan & Yuping Shi & Yahuan Huan & Fangfang Cui & Shan Qiao & Qing Chen & Zhe, 2022. "Epitaxial growth of inch-scale single-crystal transition metal dichalcogenides through the patching of unidirectionally orientated ribbons," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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