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Interface-induced nonswitchable domains in ferroelectric thin films

Author

Listed:
  • Myung-Geun Han

    (Condensed Matter Physics and Materials Science, Brookhaven National Laboratory)

  • Matthew S.J. Marshall

    (Yale University)

  • Lijun Wu

    (Condensed Matter Physics and Materials Science, Brookhaven National Laboratory)

  • Marvin A. Schofield

    (Condensed Matter Physics and Materials Science, Brookhaven National Laboratory)

  • Toshihiro Aoki

    (JEOL USA Inc.)

  • Ray Twesten

    (Gatan Inc.)

  • Jason Hoffman

    (Yale University)

  • Frederick J. Walker

    (Yale University)

  • Charles H. Ahn

    (Yale University)

  • Yimei Zhu

    (Condensed Matter Physics and Materials Science, Brookhaven National Laboratory)

Abstract

Engineering domains in ferroelectric thin films is crucial for realizing technological applications including non-volatile data storage and solar energy harvesting. Size and shape of domains strongly depend on the electrical and mechanical boundary conditions. Here we report the origin of nonswitchable polarization under external bias that leads to energetically unfavourable head-to-head domain walls in as-grown epitaxial PbZr0.2Ti0.8O3 thin films. By mapping electrostatic potentials and electric fields using off-axis electron holography and electron-beam-induced current with in situ electrical biasing in a transmission electron microscope, we show that electronic band bending across film/substrate interfaces locks local polarization direction and further produces unidirectional biasing fields, inducing nonswitchable domains near the interface. Presence of oxygen vacancies near the film surface, as revealed by electron-energy loss spectroscopy, stabilizes the charged domain walls. The formation of charged domain walls and nonswitchable domains reported in this study can be an origin for imprint and retention loss in ferroelectric thin films.

Suggested Citation

  • Myung-Geun Han & Matthew S.J. Marshall & Lijun Wu & Marvin A. Schofield & Toshihiro Aoki & Ray Twesten & Jason Hoffman & Frederick J. Walker & Charles H. Ahn & Yimei Zhu, 2014. "Interface-induced nonswitchable domains in ferroelectric thin films," Nature Communications, Nature, vol. 5(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5693
    DOI: 10.1038/ncomms5693
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    Cited by:

    1. Sajid Husain & Isaac Harris & Guanhui Gao & Xinyan Li & Peter Meisenheimer & Chuqiao Shi & Pravin Kavle & Chi Hun Choi & Tae Yeon Kim & Deokyoung Kang & Piush Behera & Didier Perrodin & Hua Guo & Jame, 2024. "Low-temperature grapho-epitaxial La-substituted BiFeO3 on metallic perovskite," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    2. Mingqiang Li & Tiannan Yang & Pan Chen & Yongjun Wang & Ruixue Zhu & Xiaomei Li & Ruochen Shi & Heng-Jui Liu & Yen-Lin Huang & Xiumei Ma & Jingmin Zhang & Xuedong Bai & Long-Qing Chen & Ying-Hao Chu &, 2022. "Electric-field control of the nucleation and motion of isolated three-fold polar vertices," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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