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Anisotropic magnetoresistance in an antiferromagnetic semiconductor

Author

Listed:
  • I. Fina

    (Institut de Ciència de Materials de Barcelona, ICMAB-CSIC
    Max Planck Institute of Microstructure Physics)

  • X. Marti

    (University of California
    Centre d'Investigació en Nanociència i Nanotecnologia (CIN2), CSIC-ICN
    Institute of Physics ASCR, v.v.i.)

  • D. Yi

    (University of California)

  • J. Liu

    (University of California)

  • J. H. Chu

    (University of California)

  • C. Rayan-Serrao

    (University of California)

  • S. Suresha

    (National Center for Electron Microscopy, Lawrence Berkeley National Laboratory)

  • A. B. Shick

    (Institute of Physics ASCR, v.v.i.)

  • J. Železný

    (Institute of Physics ASCR, v.v.i.)

  • T. Jungwirth

    (Institute of Physics ASCR, v.v.i.
    School of Physics and Astronomy, University of Nottingham)

  • J. Fontcuberta

    (Institut de Ciència de Materials de Barcelona, ICMAB-CSIC)

  • R. Ramesh

    (University of California
    University of California
    National Center for Electron Microscopy, Lawrence Berkeley National Laboratory
    Present address: Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA)

Abstract

Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4. Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the current-perpendicular-to-plane geometry without introducing a tunnel barrier into the stack. Temperature-dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.

Suggested Citation

  • I. Fina & X. Marti & D. Yi & J. Liu & J. H. Chu & C. Rayan-Serrao & S. Suresha & A. B. Shick & J. Železný & T. Jungwirth & J. Fontcuberta & R. Ramesh, 2014. "Anisotropic magnetoresistance in an antiferromagnetic semiconductor," Nature Communications, Nature, vol. 5(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5671
    DOI: 10.1038/ncomms5671
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    Cited by:

    1. Feilong Song & Yanpei Lv & Yu-Jia Sun & Simin Pang & Haonan Chang & Shan Guan & Jia-Min Lai & Xu-Jie Wang & Bang Wu & Chengyong Hu & Zhiliang Yuan & Jun Zhang, 2024. "Manipulation of anisotropic Zhang-Rice exciton in NiPS3 by magnetic field," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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