Author
Listed:
- J. Burnett
(National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK
Royal Holloway, University of London)
- L. Faoro
(Laboratoire de Physique Theorique et Hautes Energies, CNRS UMR 7589, Universites Paris 6 et 7, 4 place Jussieu
Rutgers The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA)
- I. Wisby
(National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK
Royal Holloway, University of London)
- V. L. Gurtovoi
(Institute of Microelectronics Technology and High Purity Materials, Academician Ossipyan strasse, 6, Chernogolovka, Moscow 142432, Russia)
- A. V. Chernykh
(Institute of Microelectronics Technology and High Purity Materials, Academician Ossipyan strasse, 6, Chernogolovka, Moscow 142432, Russia)
- G. M. Mikhailov
(Institute of Microelectronics Technology and High Purity Materials, Academician Ossipyan strasse, 6, Chernogolovka, Moscow 142432, Russia)
- V. A. Tulin
(Institute of Microelectronics Technology and High Purity Materials, Academician Ossipyan strasse, 6, Chernogolovka, Moscow 142432, Russia)
- R. Shaikhaidarov
(Royal Holloway, University of London)
- V. Antonov
(Royal Holloway, University of London)
- P. J. Meeson
(Royal Holloway, University of London)
- A. Ya. Tzalenchuk
(National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK
Royal Holloway, University of London)
- T. Lindström
(National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK)
Abstract
The performance of a great variety of electronic devices—ranging from semiconductor transistors to superconducting qubits—is hampered by low-frequency noise with spectra proportional to 1/f. The ubiquity and negative impact of 1/f noise has motivated intensive research into its cause, and it is now believed to originate from a bath of fluctuating two-level defect states (TLSs) embedded in the material. This phenomenon is commonly described by the long-established standard tunnelling model (STM) of independent TLS. A key prediction of STM is that the noise should vanish at low temperatures. Here we report measurements on superconducting microresonators over previously unattainable, very long time scales that show an increase in 1/f noise at low temperatures and low microwave power, contrary to the STM. We propose a new generalised tunnelling model that includes significant interaction between multiple TLSs, which fully describes these observations, as well as recent studies of individual TLS lifetimes in superconducting qubits.
Suggested Citation
J. Burnett & L. Faoro & I. Wisby & V. L. Gurtovoi & A. V. Chernykh & G. M. Mikhailov & V. A. Tulin & R. Shaikhaidarov & V. Antonov & P. J. Meeson & A. Ya. Tzalenchuk & T. Lindström, 2014.
"Evidence for interacting two-level systems from the 1/f noise of a superconducting resonator,"
Nature Communications, Nature, vol. 5(1), pages 1-6, September.
Handle:
RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5119
DOI: 10.1038/ncomms5119
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Citations
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Cited by:
- Suhas Ganjam & Yanhao Wang & Yao Lu & Archan Banerjee & Chan U Lei & Lev Krayzman & Kim Kisslinger & Chenyu Zhou & Ruoshui Li & Yichen Jia & Mingzhao Liu & Luigi Frunzio & Robert J. Schoelkopf, 2024.
"Surpassing millisecond coherence in on chip superconducting quantum memories by optimizing materials and circuit design,"
Nature Communications, Nature, vol. 15(1), pages 1-13, December.
- M. Lucas & A. V. Danilov & L. V. Levitin & A. Jayaraman & A. J. Casey & L. Faoro & A. Ya. Tzalenchuk & S. E. Kubatkin & J. Saunders & S. E. de Graaf, 2023.
"Quantum bath suppression in a superconducting circuit by immersion cooling,"
Nature Communications, Nature, vol. 14(1), pages 1-8, December.
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