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One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Author

Listed:
  • Min Zhu

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences)

  • Mengjiao Xia

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences)

  • Feng Rao

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences)

  • Xianbin Li

    (State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University)

  • Liangcai Wu

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences)

  • Xinglong Ji

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences)

  • Shilong Lv

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences)

  • Zhitang Song

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences)

  • Songlin Feng

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences)

  • Hongbo Sun

    (State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University)

  • Shengbai Zhang

    (State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
    Applied Physics, & Astronomy, Rensselaer Polytechnic Institute)

Abstract

To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set operation speed and as low as one-fifth Reset operation power, compared with Ge2Sb2Te5-based phase change memory cell at the same size. The enhancements may be rooted in the common presence of titanium-centred octahedral motifs in both amorphous and crystalline Ti0.4Sb2Te3 phases. The essentially unchanged local structures around the titanium atoms may be responsible for the significantly improved performance, as these structures could act as nucleation centres to facilitate a swift, low-energy order-disorder transition for the rest of the Sb-centred octahedrons. Our study may provide an alternative to the development of high-speed, low-power dynamic random access memory-like phase change memory technology.

Suggested Citation

  • Min Zhu & Mengjiao Xia & Feng Rao & Xianbin Li & Liangcai Wu & Xinglong Ji & Shilong Lv & Zhitang Song & Songlin Feng & Hongbo Sun & Shengbai Zhang, 2014. "One order of magnitude faster phase change at reduced power in Ti-Sb-Te," Nature Communications, Nature, vol. 5(1), pages 1-6, September.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5086
    DOI: 10.1038/ncomms5086
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    Cited by:

    1. Jin Zhao & Wen-Xiong Song & Tianjiao Xin & Zhitang Song, 2021. "Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
    2. Sang Hyun Sung & Tae Jin Kim & Hyera Shin & Tae Hong Im & Keon Jae Lee, 2022. "Simultaneous emulation of synaptic and intrinsic plasticity using a memristive synapse," Nature Communications, Nature, vol. 13(1), pages 1-12, December.

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