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Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Author

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  • Avinash P. Nayak

    (The University of Texas at Austin)

  • Swastibrata Bhattacharyya

    (Materials Research Center, Indian Institute of Science)

  • Jie Zhu

    (The University of Texas at Austin
    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences)

  • Jin Liu

    (The University of Texas at Austin)

  • Xiang Wu

    (The University of Texas at Austin)

  • Tribhuwan Pandey

    (Materials Research Center, Indian Institute of Science)

  • Changqing Jin

    (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences)

  • Abhishek K. Singh

    (Materials Research Center, Indian Institute of Science)

  • Deji Akinwande

    (The University of Texas at Austin)

  • Jung-Fu Lin

    (The University of Texas at Austin)

Abstract

Molybdenum disulphide is a layered transition metal dichalcogenide that has recently raised considerable interest due to its unique semiconducting and opto-electronic properties. Although several theoretical studies have suggested an electronic phase transition in molybdenum disulphide, there has been a lack of experimental evidence. Here we report comprehensive studies on the pressure-dependent electronic, vibrational, optical and structural properties of multilayered molybdenum disulphide up to 35 GPa. Our experimental results reveal a structural lattice distortion followed by an electronic transition from a semiconducting to metallic state at ~19 GPa, which is confirmed by ab initio calculations. The metallization arises from the overlap of the valance and conduction bands owing to sulphur–sulphur interactions as the interlayer spacing reduces. The electronic transition affords modulation of the opto-electronic gain in molybdenum disulphide. This pressure-tuned behaviour can enable the development of novel devices with multiple phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterials.

Suggested Citation

  • Avinash P. Nayak & Swastibrata Bhattacharyya & Jie Zhu & Jin Liu & Xiang Wu & Tribhuwan Pandey & Changqing Jin & Abhishek K. Singh & Deji Akinwande & Jung-Fu Lin, 2014. "Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide," Nature Communications, Nature, vol. 5(1), pages 1-9, September.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms4731
    DOI: 10.1038/ncomms4731
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    Cited by:

    1. Bo Lin & Jian Jiang & Xiao Cheng Zeng & Lei Li, 2023. "Temperature-pressure phase diagram of confined monolayer water/ice at first-principles accuracy with a machine-learning force field," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    2. Yiran Ding & Mengqi Zeng & Qijing Zheng & Jiaqian Zhang & Ding Xu & Weiyin Chen & Chenyang Wang & Shulin Chen & Yingying Xie & Yu Ding & Shuting Zheng & Jin Zhao & Peng Gao & Lei Fu, 2021. "Bidirectional and reversible tuning of the interlayer spacing of two-dimensional materials," Nature Communications, Nature, vol. 12(1), pages 1-7, December.

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