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Non-volatile organic memory with sub-millimetre bending radius

Author

Listed:
  • Richard Hahnkee Kim

    (Yonsei University)

  • Hae Jin Kim

    (School of Mechanical Engineering, Yonsei University)

  • Insung Bae

    (Yonsei University)

  • Sun Kak Hwang

    (Yonsei University)

  • Dhinesh Babu Velusamy

    (Yonsei University)

  • Suk Man Cho

    (Yonsei University)

  • Kazuto Takaishi

    (Elements Chemistry Laboratory, RIKEN)

  • Tsuyoshi Muto

    (Elements Chemistry Laboratory, RIKEN)

  • Daisuke Hashizume

    (Materials Characterization Support Unit, RIKEN Center for Emergent Matter Science)

  • Masanobu Uchiyama

    (Elements Chemistry Laboratory, RIKEN)

  • Pascal André

    (Elements Chemistry Laboratory, RIKEN)

  • Fabrice Mathevet

    (Institut Parisien de Chimie Moléculaire, Chimie des Polymères, Université Pierre et Marie Curie, UMR 8232)

  • Benoit Heinrich

    (Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, CNRS-Université de Strasbourg)

  • Tetsuya Aoyama

    (Elements Chemistry Laboratory, RIKEN)

  • Dae-Eun Kim

    (School of Mechanical Engineering, Yonsei University)

  • Hyungsuk Lee

    (School of Mechanical Engineering, Yonsei University)

  • Jean-Charles Ribierre

    (Elements Chemistry Laboratory, RIKEN
    CNRS-Ewha International Research Center, Ewha Womans University)

  • Cheolmin Park

    (Yonsei University)

Abstract

High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

Suggested Citation

  • Richard Hahnkee Kim & Hae Jin Kim & Insung Bae & Sun Kak Hwang & Dhinesh Babu Velusamy & Suk Man Cho & Kazuto Takaishi & Tsuyoshi Muto & Daisuke Hashizume & Masanobu Uchiyama & Pascal André & Fabrice , 2014. "Non-volatile organic memory with sub-millimetre bending radius," Nature Communications, Nature, vol. 5(1), pages 1-12, May.
  • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms4583
    DOI: 10.1038/ncomms4583
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