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Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching

Author

Listed:
  • Peng Gao

    (University of Michigan)

  • Jason Britson

    (Penn State University)

  • Jacob R. Jokisaari

    (University of Michigan)

  • Christopher T. Nelson

    (University of Michigan)

  • Seung-Hyub Baek

    (University of Wisconsin-Madison)

  • Yiran Wang

    (University of Michigan)

  • Chang-Beom Eom

    (University of Wisconsin-Madison)

  • Long-Qing Chen

    (Penn State University)

  • Xiaoqing Pan

    (University of Michigan)

Abstract

Polarization switching in ferroelectric thin films occurs via nucleation and growth of 180° domains through a highly inhomogeneous process in which the kinetics are largely controlled by defects, interfaces and pre-existing domain walls. Here we present the first real-time, atomic-scale observations and phase-field simulations of domain switching dominated by pre-existing, but immobile, ferroelastic domains in Pb(Zr0.2Ti0.8)O3 thin films. Our observations reveal a novel hindering effect, which occurs via the formation of a transient layer with a thickness of several unit cells at an otherwise charged interface between a ferroelastic domain and a switched domain. This transient layer possesses a low-magnitude polarization, with a dipole glass structure, resembling the dead layer. The present study provides an atomic level explanation of the hindering of ferroelectric domain motion by ferroelastic domains. Hindering can be overcome either by applying a higher bias or by removing the as-grown ferroelastic domains in fabricated nanostructures.

Suggested Citation

  • Peng Gao & Jason Britson & Jacob R. Jokisaari & Christopher T. Nelson & Seung-Hyub Baek & Yiran Wang & Chang-Beom Eom & Long-Qing Chen & Xiaoqing Pan, 2013. "Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching," Nature Communications, Nature, vol. 4(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3791
    DOI: 10.1038/ncomms3791
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    Cited by:

    1. Ang Tao & Yixiao Jiang & Shanshan Chen & Yuqiao Zhang & Yi Cao & Tingting Yao & Chunlin Chen & Hengqiang Ye & Xiu-Liang Ma, 2024. "Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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