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A correlated nickelate synaptic transistor

Author

Listed:
  • Jian Shi

    (School of Engineering and Applied Sciences, Harvard University)

  • Sieu D. Ha

    (School of Engineering and Applied Sciences, Harvard University)

  • You Zhou

    (School of Engineering and Applied Sciences, Harvard University)

  • Frank Schoofs

    (School of Engineering and Applied Sciences, Harvard University)

  • Shriram Ramanathan

    (School of Engineering and Applied Sciences, Harvard University)

Abstract

Inspired by biological neural systems, neuromorphic devices may open up new computing paradigms to explore cognition, learning and limits of parallel computation. Here we report the demonstration of a synaptic transistor with SmNiO3, a correlated electron system with insulator–metal transition temperature at 130°C in bulk form. Non-volatile resistance and synaptic multilevel analogue states are demonstrated by control over composition in ionic liquid-gated devices on silicon platforms. The extent of the resistance modulation can be dramatically controlled by the film microstructure. By simulating the time difference between postneuron and preneuron spikes as the input parameter of a gate bias voltage pulse, synaptic spike-timing-dependent plasticity learning behaviour is realized. The extreme sensitivity of electrical properties to defects in correlated oxides may make them a particularly suitable class of materials to realize artificial biological circuits that can be operated at and above room temperature and seamlessly integrated into conventional electronic circuits.

Suggested Citation

  • Jian Shi & Sieu D. Ha & You Zhou & Frank Schoofs & Shriram Ramanathan, 2013. "A correlated nickelate synaptic transistor," Nature Communications, Nature, vol. 4(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3676
    DOI: 10.1038/ncomms3676
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    Cited by:

    1. Neda Alsadat Aghamiri & Guangwei Hu & Alireza Fali & Zhen Zhang & Jiahan Li & Sivacarendran Balendhran & Sumeet Walia & Sharath Sriram & James H. Edgar & Shriram Ramanathan & Andrea Alù & Yohannes Aba, 2022. "Reconfigurable hyperbolic polaritonics with correlated oxide metasurfaces," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    2. Han Xu & Dashan Shang & Qing Luo & Junjie An & Yue Li & Shuyu Wu & Zhihong Yao & Woyu Zhang & Xiaoxin Xu & Chunmeng Dou & Hao Jiang & Liyang Pan & Xumeng Zhang & Ming Wang & Zhongrui Wang & Jianshi Ta, 2023. "A low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing," Nature Communications, Nature, vol. 14(1), pages 1-11, December.

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