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In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

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  • Gyeong-Su Park

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

  • Young Bae Kim

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

  • Seong Yong Park

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

  • Xiang Shu Li

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

  • Sung Heo

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

  • Myoung-Jae Lee

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

  • Man Chang

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

  • Ji Hwan Kwon

    (Seoul National University)

  • M. Kim

    (Seoul National University)

  • U-In Chung

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

  • Regina Dittmann

    (Jülich-Aachen Research Alliance, Section Fundamentals of Future Information Technology (JARA-FIT))

  • Rainer Waser

    (Jülich-Aachen Research Alliance, Section Fundamentals of Future Information Technology (JARA-FIT))

  • Kinam Kim

    (Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd.)

Abstract

Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controversial. Here we report the fabrication of a resistive switching device inside a transmission electron microscope, made from a Pt/SiO2/a-Ta2O5−x/a-TaO2−x/Pt structure, which clearly shows reversible bipolar resistive switching behaviour. The current–voltage measurements simultaneously confirm each of the resistance states (set, reset and breakdown). In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO2−x base layer, which consist of nanoscale TaO1−x filaments. Information on the structure and dimensions of conductive channels observed in situ offers great potential for designing resistive switching devices with the high endurance and large scalability.

Suggested Citation

  • Gyeong-Su Park & Young Bae Kim & Seong Yong Park & Xiang Shu Li & Sung Heo & Myoung-Jae Lee & Man Chang & Ji Hwan Kwon & M. Kim & U-In Chung & Regina Dittmann & Rainer Waser & Kinam Kim, 2013. "In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure," Nature Communications, Nature, vol. 4(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3382
    DOI: 10.1038/ncomms3382
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    Cited by:

    1. Mahata, Chandreswar & Kim, Sungjun, 2021. "Electrical and optical artificial synapses properties of TiN-nanoparticles incorporated HfAlO-alloy based memristor," Chaos, Solitons & Fractals, Elsevier, vol. 153(P1).

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