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A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

Author

Listed:
  • Y. Z. Chen

    (Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark)

  • N. Bovet

    (Nano-Science Center, University of Copenhagen)

  • F. Trier

    (Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark)

  • D. V. Christensen

    (Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark)

  • F. M. Qu

    (Institute of Physics, Chinese Academy of Sciences)

  • N. H. Andersen

    (Technical University of Denmark)

  • T. Kasama

    (Center for Electron Nanoscopy, Technical University of Denmark)

  • W. Zhang

    (Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark)

  • R. Giraud

    (Leibniz Institute for Solid State and Materials Research, IFW Dresden
    Laboratoire de Photonique et de Nanostructures-CNRS, Route de Nozay, 91460 Marcoussis, France)

  • J. Dufouleur

    (Leibniz Institute for Solid State and Materials Research, IFW Dresden)

  • T. S. Jespersen

    (Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen)

  • J. R. Sun

    (Institute of Physics, Chinese Academy of Sciences)

  • A. Smith

    (Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark)

  • J. Nygård

    (Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen)

  • L. Lu

    (Institute of Physics, Chinese Academy of Sciences)

  • B. Büchner

    (Leibniz Institute for Solid State and Materials Research, IFW Dresden)

  • B. G. Shen

    (Institute of Physics, Chinese Academy of Sciences)

  • S. Linderoth

    (Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark)

  • N. Pryds

    (Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark)

Abstract

The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm2 V-1 s-1 (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

Suggested Citation

  • Y. Z. Chen & N. Bovet & F. Trier & D. V. Christensen & F. M. Qu & N. H. Andersen & T. Kasama & W. Zhang & R. Giraud & J. Dufouleur & T. S. Jespersen & J. R. Sun & A. Smith & J. Nygård & L. Lu & B. Büc, 2013. "A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3," Nature Communications, Nature, vol. 4(1), pages 1-6, June.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms2394
    DOI: 10.1038/ncomms2394
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    Cited by:

    1. Jinsol Seo & Hyungwoo Lee & Kitae Eom & Jinho Byun & Taewon Min & Jaekwang Lee & Kyoungjun Lee & Chang-Beom Eom & Sang Ho Oh, 2024. "Feld-induced modulation of two-dimensional electron gas at LaAlO3/SrTiO3 interface by polar distortion of LaAlO3," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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