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Three-dimensional nanonetworks for giant stretchability in dielectrics and conductors

Author

Listed:
  • Junyong Park

    (KAIST Institute for The Nanocentury, Korea Advanced Institute of Science and Technology (KAIST))

  • Shuodao Wang

    (Northwestern University
    Northwestern University)

  • Ming Li

    (State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology)

  • Changui Ahn

    (KAIST Institute for The Nanocentury, Korea Advanced Institute of Science and Technology (KAIST))

  • Jerome K. Hyun

    (KAIST Institute for The Nanocentury, Korea Advanced Institute of Science and Technology (KAIST))

  • Dong Seok Kim

    (KAIST Institute for The Nanocentury, Korea Advanced Institute of Science and Technology (KAIST))

  • Do Kyung Kim

    (KAIST Institute for The Nanocentury, Korea Advanced Institute of Science and Technology (KAIST))

  • John A. Rogers

    (University of Illinois at Urbana-Champaign)

  • Yonggang Huang

    (Northwestern University
    Northwestern University)

  • Seokwoo Jeon

    (KAIST Institute for The Nanocentury, Korea Advanced Institute of Science and Technology (KAIST))

Abstract

The realization of levels of stretchability that extend beyond intrinsic limits of bulk materials is of great importance to stretchable electronics. Here we report large-area, three-dimensional nano-architectures that achieve this outcome in materials that offer both insulating and conductive properties. For the elastomer poly(dimethylsiloxane), such geometries enhance the stretchability and fracture strain by ~62% and ~225% over the bulk, unstructured case. The underlying physics involves local rotations of narrow structural elements in the three-dimensional network, as identified by mechanical modelling. To demonstrate the applications of three-dimensional poly(dimethylsiloxane), we create a stretchable conductor obtained by filling the interstitial regions with liquid metal. This stretchable composite shows extremely high electrical conductivity (~24,100 S cm−1) even at strains >200%, with good cyclic properties and with current-carrying capacities that are sufficient for interconnects in light-emitting diode systems. Collectively, these concepts provide new design opportunities for stretchable electronics.

Suggested Citation

  • Junyong Park & Shuodao Wang & Ming Li & Changui Ahn & Jerome K. Hyun & Dong Seok Kim & Do Kyung Kim & John A. Rogers & Yonggang Huang & Seokwoo Jeon, 2012. "Three-dimensional nanonetworks for giant stretchability in dielectrics and conductors," Nature Communications, Nature, vol. 3(1), pages 1-8, January.
    • Handle: RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1929
    DOI: 10.1038/ncomms1929
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    Cited by:

    1. Myungwoo Choi & Juyoung An & Hyejeong Lee & Hanhwi Jang & Ji Hong Park & Donghwi Cho & Jae Yong Song & Seung Min Kim & Min-Wook Oh & Hosun Shin & Seokwoo Jeon, 2024. "High figure-of-merit for ZnO nanostructures by interfacing lowly-oxidized graphene quantum dots," Nature Communications, Nature, vol. 15(1), pages 1-12, December.

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