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A fast and low-power microelectromechanical system-based non-volatile memory device

Author

Listed:
  • Sang Wook Lee

    (School of Physics, Konkuk University)

  • Seung Joo Park

    (Seoul National University)

  • Eleanor E. B. Campbell

    (School of Physics, Konkuk University
    EaStCHEM, School of Chemistry, Edinburgh University)

  • Yung Woo Park

    (Seoul National University
    Seoul National University, Gwanak-ro 599, Gwanak-gu, Seoul 151-747, Korea.)

Abstract

Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices.

Suggested Citation

  • Sang Wook Lee & Seung Joo Park & Eleanor E. B. Campbell & Yung Woo Park, 2011. "A fast and low-power microelectromechanical system-based non-volatile memory device," Nature Communications, Nature, vol. 2(1), pages 1-6, September.
    • Handle: RePEc:nat:natcom:v:2:y:2011:i:1:d:10.1038_ncomms1227
    DOI: 10.1038/ncomms1227
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    Cited by:

    1. Yong-Bok Lee & Min-Ho Kang & Pan-Kyu Choi & Su-Hyun Kim & Tae-Soo Kim & So-Young Lee & Jun-Bo Yoon, 2023. "Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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