Author
Listed:
- Yue Pang
(The Chinese University of Hong Kong)
- Yaoqiang Zhou
(The Chinese University of Hong Kong
Aalto University)
- Shirong Qiu
(The Chinese University of Hong Kong)
- Lei Tong
(The Chinese University of Hong Kong)
- Ni Zhao
(The Chinese University of Hong Kong)
- Jian-Bin Xu
(The Chinese University of Hong Kong
The Chinese University of Hong Kong)
Abstract
Non-monotonic neurons integrate monotonic input into a non-monotonic response, effectively improving the efficiency of unsupervised learning and precision of information processing in peripheral sensor systems. However, non-monotonic neuron-synapse circuits based on conventional technology require multiple transistors and complicated layouts. By leveraging the advantages of compact design for complex functions with two-dimensional materials, herein, we used anti-ambipolar transistor with airgaps configuration to fabricate the non-monotonic neuron with a bell-shaped response function. The anti-ambipolar transistor demonstrated near-ideal subthreshold swings of 60 mV/dec, a benchmark combination of a high peak-to-valley ratio of ~105. By utilizing the floating gate architecture, the non-volatile transistors achieved a high operating speed ~10−7 s and robust durability exceeding 104 cycles. The non-volatile anti-ambipolar transistor showed spike amplitude, width, and number-dependent excitation and inhibition synaptic behaviors. Furthermore, its non-volatile performance can replicate biological neurons showing a reconfigurable monotonic and non-monotonic response by modulating the amplitude and width of presynaptic input. We encoded systolic blood pressure and resting heart rate data to train non-monotonic neurons, achieving the prediction of health conditions with a detection accuracy surpassing 85% at the device level, closely corresponding to the recognized medical standards.
Suggested Citation
Yue Pang & Yaoqiang Zhou & Shirong Qiu & Lei Tong & Ni Zhao & Jian-Bin Xu, 2025.
"Artificial non-monotonic neurons based on nonvolatile anti-ambipolar transistors,"
Nature Communications, Nature, vol. 16(1), pages 1-10, December.
Handle:
RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-58541-8
DOI: 10.1038/s41467-025-58541-8
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